Desktop atomic layer deposition systemcauseHarvard University Center for NanoscienceChief Scientist of Thin Film Deposition Technology ResearchDr. Philippe de RouffignacBased on years of rich experience in nano film preparation and understanding of the practical research needs of researchers, this desktop, high-performance atomic layer deposition system has been designed and launched. The first device2015Year inCNSSince installation, there have been over1500User friendly design, user-friendly designoperateConvenient.
equipment information
Main features:
1. The chamber is designed specifically forR&DDesign and optimize, sample size up to diameter4’’,Upgradeable to 6 '';
2. Controllable range of reaction chamber temperature:RT-350℃;
3. Controllable range of precursor source temperature:RT-150℃;
4. Controllable range of chamber processing pressure:0.1-1.5 torr;
5. Up to 5 source extensions;
6. Fast loop processing function;
7. Optimization design of gas path and miniaturization design of cavity;
8. Up to one minute6-10;
9. Mature film recipes with built-in programs;
10. Touch screen PLC control;
11. Can be used with a glove box;
12. Can be equipped with an ozone generator;
Materials that can be processed:
MATERIAL CLASS |
STANDARD RECIPES |
RECIPES IN DEVELOPMENT |
SYSTEM CAPABLE MATERIALS |
Oxides (AxOy) |
Al, Si, Ti, Zn, Zr, Hf |
V, Y, Ru, In, Sn, Pt |
Li, Be, Mg, Ca, Sc, Mn, Fe, Co, Ni, Cu, Ga, Sr Nb, Rh, Pd, Sn, Ba, La, Pr, Nd, Sm, Eu, Gd |
Elementals (A) |
Ru, Pd, Pt, Ni, Co |
Rh, Os, Ir |
Fe, Cu, Mo |
Nitrides (AxNy) |
Zr, Hf, W |
Ti, Ta |
Cu, Ga, Nb, Mo, In |
Sulfides (AxSy) |
Ca, Ti, Mn, Cu, Zn, Sr, y, Cd, In, Sn, Sb, Ba, La, W |
||
Other Compounds |
AZO (AL:ZnO), AxSiyOz ()A=Al, Zr, Hf |
YSZ (yttria stabilized sirconia) ITO |
Many others |