Ultra high precision and minimization of probe tip variables for measuring sub micron level surface roughness, the surface roughness of wafers is crucial for determining the performance of semiconductor devices. For the most advanced component manufacturers, chip manufacturers, and wafer suppliers, more precise roughness control is required for wafer vendors' ultra flat surfaces by providing below0.5The industry has low noise and combines it with its true non-contact mode,Park NX-WaferReliable measurement of sub Emmy level roughness with minimal needle tip variation can be obtained,ParkThe crosstalk cancellation also allows for very flat orthogonalityXYScanning, without background curvature, is performed on the flattest surface in a timely manner, and there is no need to consider scanning position, speed, and size too much, which makes it very accurate and reproducible for measuring micro level roughness to long range uneven surfaces. Parker's IntelligenceADRTechnology provides fully automated defect detection and recognition, enabling critical online processes to be resolved with high resolution3DImage classification of defect types and identification of their sources, intelligentADRSpecially designed to provide the most advanced defect detection solution for the semiconductor industry, with automatic target localization and the need for dense reference marks that do not frequently damage samples. Compared with traditional defect detection methods, it is intelligentADRThe process has improved1000%In addition to productivity, Parker has creativityTrue-ContactmodeAFMTechnology enables newADRAbility to improve20Longer probe lifespan.
The industry-leading low-noise Parker atomic force microscope, combined with a long-distance sliding table, has become an atomic force profiler for chemical mechanical polishing metrology, a new low-noise instrumentAFPProvides very flat contour scanning for local and comprehensive uniformity measurement, with the best contour scanning accuracy and market repeatability, ensuring high-precision measurement without non-linear or high noise background removal over a wide range of contour ranges.
Main technical features
200 mmelectricXYplatform |
300 mmelectricXYplatform |
electricZplatform |
The itinerary can be reached275mm x 200mm, 0.5 μmresolution |
The itinerary can be reached400 mm x 300 mm, 0.5μmresolution |
25 mm ZTravel distance 0.08μmresolution |
Electric focusing platform |
sample thickness |
COGNEXimage recognition |
8mmtripZAxial optical distance |
Thick to20mm |
Image correction resolution1/4 pixel |
200mmsystem |
300mmsystem |
Equipment demand environment |
2732mm x1100mm x 2400 mm about2110kg Operator space:3300mm x 1950mm |
3486mm x 1450 mm x 2400 mm about2950 kg Operator space: 4770mm x 3050 mm |
room temperature10 ℃~40℃ operate18 ℃~24℃ humidity30%~60% |
major function
1.Automatic defect detection of wafers and substrates
new300mmX-rayADRProvides a fully automated defect review process that includes coordinate transformation from defect mapping and measurement of corrected defects, as well as magnification scanning imaging, without the need for sample wafers
What mark,
2.Yaemi level surface roughness control
By providing lower than0.5The lowest noise level in the industry is achieved, allowing for precise, repeatable, and reproducible Yaemi level roughness on the flattest substrates and wafers
Measure roughness and minimize the variation of the needle tip, even when the scanning size reaches100Long distance wavelengths of μ m x 100 μ m can also achieve highly accurate and reproducible surface measurements
measure
3.CMPLong range contour scanning for characterization
Park NX Wafer achieves unprecedented successCMPMeasurement, including indentation, erosion, and excessive edge erosion(EOE)Measurement of local and local flatness.
application
line widthmeasure
super-smoothMeasurement of material surface roughness
Application of automatic detection of wafer defects
Related literature
Ardavan