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NX Wafer Fully Automated Wafer Inspection Atomic Force Microscope
NX Wafer Fully Automated Wafer Inspection Atomic Force Microscope
Product details

Ultra high precision and minimization of probe tip variables for measuring sub micron level surface roughness, the surface roughness of wafers is crucial for determining the performance of semiconductor devices. For the most advanced component manufacturers, chip manufacturers, and wafer suppliers, more precise roughness control is required for wafer vendors' ultra flat surfaces by providing below0.5The industry has low noise and combines it with its true non-contact mode,Park NX-WaferReliable measurement of sub Emmy level roughness with minimal needle tip variation can be obtained,ParkThe crosstalk cancellation also allows for very flat orthogonalityXYScanning, without background curvature, is performed on the flattest surface in a timely manner, and there is no need to consider scanning position, speed, and size too much, which makes it very accurate and reproducible for measuring micro level roughness to long range uneven surfaces. Parker's IntelligenceADRTechnology provides fully automated defect detection and recognition, enabling critical online processes to be resolved with high resolution3DImage classification of defect types and identification of their sources, intelligentADRSpecially designed to provide the most advanced defect detection solution for the semiconductor industry, with automatic target localization and the need for dense reference marks that do not frequently damage samples. Compared with traditional defect detection methods, it is intelligentADRThe process has improved1000%In addition to productivity, Parker has creativityTrue-ContactmodeAFMTechnology enables newADRAbility to improve20Longer probe lifespan.


The industry-leading low-noise Parker atomic force microscope, combined with a long-distance sliding table, has become an atomic force profiler for chemical mechanical polishing metrology, a new low-noise instrumentAFPProvides very flat contour scanning for local and comprehensive uniformity measurement, with the best contour scanning accuracy and market repeatability, ensuring high-precision measurement without non-linear or high noise background removal over a wide range of contour ranges.




Main technical features

200 mmelectricXYplatform

300 mmelectricXYplatform

electricZplatform

The itinerary can be reached275mm x 200mm,

0.5 μmresolution

The itinerary can be reached400 mm x 300 mm

0.5μmresolution

25 mm ZTravel distance

0.08μmresolution

Electric focusing platform

sample thickness

COGNEXimage recognition

8mmtripZAxial optical distance

Thick to20mm

Image correction resolution1/4 pixel

200mmsystem

300mmsystem

Equipment demand environment

2732mm x1100mm x 2400 mm

about2110kg

Operator space:3300mm x 1950mm

3486mm x 1450 mm x 2400 mm

about2950 kg

Operator space: 4770mm x 3050 mm

room temperature10 ~40

operate18 ~24

humidity30%~60%


major function

1.Automatic defect detection of wafers and substrates

new300mmX-rayADRProvides a fully automated defect review process that includes coordinate transformation from defect mapping and measurement of corrected defects, as well as magnification scanning imaging, without the need for sample wafers

What mark,

2.Yaemi level surface roughness control

By providing lower than0.5The lowest noise level in the industry is achieved, allowing for precise, repeatable, and reproducible Yaemi level roughness on the flattest substrates and wafers

Measure roughness and minimize the variation of the needle tip, even when the scanning size reaches100Long distance wavelengths of μ m x 100 μ m can also achieve highly accurate and reproducible surface measurements

measure

3.CMPLong range contour scanning for characterization

Park NX Wafer achieves unprecedented successCMPMeasurement, including indentation, erosion, and excessive edge erosion(EOE)Measurement of local and local flatness.


application

line widthmeasure


super-smoothMeasurement of material surface roughness

Application of automatic detection of wafer defects



Related literature

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