NTT'sFZPEtched by dry methodTaform. Has excellent high durabilityXRadiation radiation, high resolution and high contrast, clear absorber patterns,S/NHigh ratio, less imaging defects,Can be ideally applied toXX-ray microscopeXRadiation and Microbeam RadiationXRadiographic imaging.
In addition, it also provides software forXRadiation and extreme ultraviolet(EUV、XUV)In the fieldTaPattern/SiNMembrane typeFZPandAuBoard pattern/SiNMembrane typeFZPAnd provide a stepped (Kino hologram)FZP
model |
Aspect ratio |
Membrane material |
Film thickness (μm) |
ΔRn (nm) |
D (μm) |
N |
Tm (nm) |
FZP-S38/84 |
4.2 |
SiN |
0.15 |
38 |
84 |
550 |
160 |
FZP-S50/80 |
5 |
SiN |
0.2 |
50 |
80 |
400 |
250 |
FZP-S40/155 |
5 |
SiN |
2 |
40 |
155 |
970 |
200 |
FZP-S50/330 |
8 |
SiN |
1 |
50 |
330 |
1,650 |
400 |
FZP-S86/416 |
8 |
SiN |
2 |
86 |
416 |
1,200 |
700 |
FZP-100/155 |
8 |
SiN |
2 |
100 |
155 |
388 |
800 |
FZP-173/208 |
5.8 |
SiN |
2 |
173 |
208 |
300 |
1,000 |
FZP-200/206 |
8 |
SiN |
2 |
200 |
206 |
255 |
1,600 |
FZP-C234/2500 |
0.6 |
SiC |
0.2 |
234 |
2,500 |
2,670 |
150 |
NTT-AT's EUV-FZP has been optimized for EUV wavelengths.
Ta absorbent pattern on thin film achieves below 100nm/a
Minority 100 nanometer focusing and imaging, etc
-EUV microscope
-EUV Nanobeam Generation
-Ultra fine EUV inspection